IRF7483M Todos los transistores

 

IRF7483M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7483M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 135 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 642 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: DIRECTFET
 

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IRF7483M Datasheet (PDF)

 ..1. Size:495K  international rectifier
irf7483m.pdf pdf_icon

IRF7483M

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

 0.1. Size:510K  international rectifier
irf7483mtrpbf.pdf pdf_icon

IRF7483M

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

 8.1. Size:498K  international rectifier
irf7480m.pdf pdf_icon

IRF7483M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.2. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7483M

PD - 95281AIRF7484PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveVDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14ABenefitsl Advanced Process Technologyl Ultra Low On-Resistancel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax.AA1 8l Lead-FreeS D2 7S DDescription3 6S DThis Stripe Planar design of HEXFET Power45MOSFETs

Otros transistores... IRF7475PBF , IRF7476PBF , IRF7477 , IRF7477PBF , IRF7478PBF , IRF7478PBF-1 , IRF7478QPBF , IRF7480M , IRF9640 , IRF7484PBF , IRF7484Q , IRF7490PBF , IRF7492PBF , IRF7493PBF , IRF7493PBF-1 , IRF7494PBF , IRF7495PBF .

History: 2SK2420 | AM4530C | SM2202NSQE | SM3413PSQG | UTT30N10 | RQK0603CGDQA | CEP14G04

 

 
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