Справочник MOSFET. IRF7483M

 

IRF7483M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7483M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 135 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 642 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: DIRECTFET

 Аналог (замена) для IRF7483M

 

 

IRF7483M Datasheet (PDF)

 ..1. Size:495K  international rectifier
irf7483m.pdf

IRF7483M
IRF7483M

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

 0.1. Size:510K  infineon
irf7483mtrpbf.pdf

IRF7483M
IRF7483M

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon

 8.1. Size:498K  international rectifier
irf7480m.pdf

IRF7483M
IRF7483M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.2. Size:231K  international rectifier
irf7484pbf.pdf

IRF7483M
IRF7483M

PD - 95281AIRF7484PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveVDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14ABenefitsl Advanced Process Technologyl Ultra Low On-Resistancel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax.AA1 8l Lead-FreeS D2 7S DDescription3 6S DThis Stripe Planar design of HEXFET Power45MOSFETs

 8.3. Size:141K  international rectifier
irf7488.pdf

IRF7483M
IRF7483M

PD - 94507IRF7488HEXFET Power MOSFETApplicationsl High frequency DC-DC converters VDSS RDS(on) max Qg80V 29mW@VGS=10V 38nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche VoltageG Dand

 8.4. Size:180K  international rectifier
irf7484.pdf

IRF7483M
IRF7483M

PD - 94446AIRF7484Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air BagVDSS RDS(on) max (mW) IDBenefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to TjmaxAA1 8S D2 7S DDescription3 6S DSpecifically designed for Automotive applications

 8.5. Size:224K  international rectifier
auirf7484q.pdf

IRF7483M
IRF7483M

AUTOMOTIVE GRADE PD - 97757AUIRF7484QFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyAA1 8l Low On-Resistance S D V(BR)DSS40V2 7S Dl 150C Operating Temperature3 6S D RDS(on) max.10ml Fast Switching4 5G Dl Fully Avalanche RatedID14ATop Viewl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*

 8.6. Size:248K  international rectifier
irf7484q.pdf

IRF7483M
IRF7483M

PD - 94803AAUTOMOTIVE MOSFETIRF7484QTypical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air BagVDSS RDS(on) max (mW) IDBenefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to TjmaxAA1 8S D2 7S DDescription3 6S DSpecifically designed for Aut

 8.7. Size:498K  infineon
irf7480mtrpbf.pdf

IRF7483M
IRF7483M

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.8. Size:151K  infineon
irf7488pbf.pdf

IRF7483M
IRF7483M

PD - 95283IRF7488PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qgl High frequency DC-DC converters80V 29mW@VGS=10V 38nCl Lead-FreeABenefitsA1 8S Dl Low Gate-to-Drain Charge to Reduce2 7S DSwitching Losses3 6S Dl Fully Characterized Capacitance Including4 5G DEffective COSS to Simplify Design, (SeeApp. Note AN1001)SO-8Top Viewl Fully Cha

 8.9. Size:416K  infineon
auirf7484q.pdf

IRF7483M
IRF7483M

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology AVDSS A1 8 Low On-Resistance 40V S D2 7S D 150C Operating Temperature RDS(on) max. 3 6S D Fast Switching 10m4 5G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto

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