IRF7495PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7495PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET IRF7495PBF

IRF7495PBF Datasheet (PDF)

..1. Size:146K international rectifier
irf7495pbf.pdf

PD - 95288IRF7495PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters100V 22m @VGS = 10V 7.3Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avala

..2. Size:146K infineon
irf7495pbf.pdf

8.1. Size:159K international rectifier
irf7493pbf.pdf

PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av

8.2. Size:567K international rectifier
irf7494.pdf

FOR REVIEW ONLYPD - 94641PD - TBDIRF7494HEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters44m @VGS = 10V150V 5.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Charact

8.3. Size:183K international rectifier
irf7492pbf.pdf

PD - 95287AIRF7492PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters200V 79mW@VGS = 10V 3.7Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Ava

8.4. Size:149K international rectifier
irf7490pbf.pdf

PD - 95284IRF7490PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max Qgl Lead-Free100V 39mW@VGS=10V 37nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche

8.5. Size:105K international rectifier
irf7492.pdf

PD - 94498IRF7492HEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters200V 79m@VGS = 10V 3.7ABenefitsAA Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4App. Note AN1001) 5G D Fully Characterized A

8.6. Size:508K international rectifier
irf7491.pdf

PD - 94537IRF7491HEXFET Power MOSFETApplications VDSS RDS(on) max ID High frequency DC-DC converters80V 16m@VGS = 10V 9.7ABenefitsAA Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G D Fully Characterized Avalanche VoltageSO-8

8.7. Size:223K international rectifier
irf7494pbf.pdf

PD - 95349CIRF7494PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters44m150V @VGS = 10V5.1Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized

8.8. Size:218K international rectifier
irf7493pbf-1.pdf

IRF7493PbF-1HEXFET Power MOSFETVDS 80 VAA1 8S DRDS(on) max 15 m2 7(@V = 10V)GS S DQg (typical) 35 nC3 6S DID 4 59.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmenta

8.9. Size:141K international rectifier
irf7490.pdf

PD - 94508IRF7490HEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max Qg100V 39mW@VGS=10V 37nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche Voltage G Dan

8.10. Size:92K international rectifier
irf7493.pdf

PD - 94654PROVISIONALIRF7493HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters80V 15m @VGS = 10V 9.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avalanch

8.11. Size:159K infineon
irf7493pbf.pdf