IRF7495PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7495PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 7.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: SO-8
Аналог (замена) для IRF7495PBF
IRF7495PBF Datasheet (PDF)
irf7495pbf.pdf
PD - 95288IRF7495PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters100V 22m @VGS = 10V 7.3Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avala
irf7495pbf.pdf
PD - 95288IRF7495PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters100V 22m @VGS = 10V 7.3Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avala
irf7493pbf.pdf
PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av
irf7494.pdf
FOR REVIEW ONLYPD - 94641PD - TBDIRF7494HEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters44m @VGS = 10V150V 5.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Charact
irf7492pbf.pdf
PD - 95287AIRF7492PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters200V 79mW@VGS = 10V 3.7Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Ava
irf7490pbf.pdf
PD - 95284IRF7490PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max Qgl Lead-Free100V 39mW@VGS=10V 37nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche
irf7492.pdf
PD - 94498IRF7492HEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters200V 79m@VGS = 10V 3.7ABenefitsAA Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4App. Note AN1001) 5G D Fully Characterized A
irf7491.pdf
PD - 94537IRF7491HEXFET Power MOSFETApplications VDSS RDS(on) max ID High frequency DC-DC converters80V 16m@VGS = 10V 9.7ABenefitsAA Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G D Fully Characterized Avalanche VoltageSO-8
irf7494pbf.pdf
PD - 95349CIRF7494PbFHEXFET Power MOSFETApplications VDSS RDS(on) max IDl High frequency DC-DC converters44m150V @VGS = 10V5.1Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized
irf7493pbf-1.pdf
IRF7493PbF-1HEXFET Power MOSFETVDS 80 VAA1 8S DRDS(on) max 15 m2 7(@V = 10V)GS S DQg (typical) 35 nC3 6S DID 4 59.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmenta
irf7490.pdf
PD - 94508IRF7490HEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max Qg100V 39mW@VGS=10V 37nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche Voltage G Dan
irf7493.pdf
PD - 94654PROVISIONALIRF7493HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters80V 15m @VGS = 10V 9.2ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (SeeApp. Note AN1001) 4 5G Dl Fully Characterized Avalanch
irf7493pbf.pdf
PD - 95289IRF7493PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High frequency DC-DC convertersl Lead-Free 15m @VGS=10V80V 35nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Av
irf7490pbf.pdf
PD - 95284IRF7490PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max Qgl Lead-Free100V 39mW@VGS=10V 37nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
