IRF7524D1GPBF Todos los transistores

 

IRF7524D1GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7524D1GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: MICRO-8
     - Selección de transistores por parámetros

 

IRF7524D1GPBF Datasheet (PDF)

 ..1. Size:197K  international rectifier
irf7524d1gpbf.pdf pdf_icon

IRF7524D1GPBF

PD -96176IRF7524D1GPbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8MOSFET and Schottky Diode KAVDSS = -20Vl P-Channel HEXFET2 7A Kl Low VF Schottky Rectifier3 6S Dl Generation 5 Technology RDS(on) = 0.27TM45l Micro8 FootprintG Dl Lead-FreeSchottky Vf = 0.39Vl Halogen-Free Top ViewDescriptionThe FETKYTM family of co-packaged H

 5.1. Size:151K  international rectifier
irf7524d1.pdf pdf_icon

IRF7524D1GPBF

PD -91648CPRELIMINARYIRF7524D1FETKYTM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 P-Channel HEXFET A K Low VF Schottky Rectifier3 6S DRDS(on) = 0.27 Generation 5 Technology45TM G D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d

 5.2. Size:165K  international rectifier
irf7524d1pbf.pdf pdf_icon

IRF7524D1GPBF

PD -95242IRF7524D1PbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l P-Channel HEXFET A Kl Low VF Schottky Rectifier3 6S DRDS(on) = 0.27l Generation 5 Technology45TM G Dl Micro8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Scho

 8.1. Size:204K  international rectifier
irf7523d1.pdf pdf_icon

IRF7524D1GPBF

PD- 91647CIRF7523D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 N-Channel HEXFETA K Low VF Schottky Rectifier3 6 RDS(on) = 0.11S D Generation 5 Technology45TMG D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schott

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MDU3603RH | IRFZ24NLPBF | 6N70KG-TF1-T | NDDL01N60Z | IRFSL7730PBF | QH8MA4 | HAT1132R

 

 
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