SIHF22N65E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF22N65E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-220FP

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SIHF22N65E datasheet

 ..1. Size:163K  vishay
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SIHF22N65E

SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availa

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 sihf22n60e.pdf pdf_icon

SIHF22N65E

SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced Switching and Conduction Losses Qg max. (nC) 86 Ultra Low Gate Charge (Qg) Qgs (nC) 14 Avalanche Energy Rated (UIS) Qgd (nC) 26

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 sihf22n60s.pdf pdf_icon

SIHF22N65E

SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS at TJ max. (V) 650 High EAR Capability RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 Ultra Low Ron Configuration Single dV/dt Ruggedness Ultra Low G

 9.1. Size:167K  vishay
 sihf23n60e.pdf pdf_icon

SIHF22N65E

SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Qgd (nC) 25 Avalanche energy rated (UIS) Con

MOSTRAR MÁS

Otros transistores... IRF7524D1GPBF, IRF7524D1PBF, IRF7526D1PBF, IRF7534D1, IRF7534D1PBF, IRF7580M, IRF7601PBF, IRF7603PBF, IRF640, SIHF23N60E, SIHF28N60EF, SIHF30N60E, SIHF510, SIHF510S, SIHF520, SIHF520S, SIHF530