SIHF22N65E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHF22N65E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-220FP

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SIHF22N65E Datasheet (PDF)

..1. Size:163K vishay
sihf22n65e.pdf

SiHF22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesAvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Availa

6.1. Size:165K vishay
sihf22n60e.pdf

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

6.2. Size:165K vishay
sihf22n60s.pdf

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

9.1. Size:167K vishay
sihf23n60e.pdf

SiHF23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

9.2. Size:156K vishay
sihf28n60ef.pdf

SiHF28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc

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