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SIHF23N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHF23N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 119 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.158 Ohm
   Paquete / Cubierta: TO-220FP
 

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SIHF23N60E Datasheet (PDF)

 ..1. Size:167K  vishay
 sihf23n60e.pdf pdf_icon

SIHF23N60E

SiHF23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

 9.1. Size:165K  vishay
 sihf22n60e.pdf pdf_icon

SIHF23N60E

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

 9.2. Size:165K  vishay
 sihf22n60s.pdf pdf_icon

SIHF23N60E

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

 9.3. Size:163K  vishay
 sihf22n65e.pdf pdf_icon

SIHF23N60E

SiHF22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesAvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Availa

MOSTRAR MÁS

Otros transistores... IRF7524D1PBF , IRF7526D1PBF , IRF7534D1 , IRF7534D1PBF , IRF7580M , IRF7601PBF , IRF7603PBF , SIHF22N65E , IRF1404 , SIHF28N60EF , SIHF30N60E , SIHF510 , SIHF510S , SIHF520 , SIHF520S , SIHF530 , SIHF530S .

History: IPD046N08N5 | HGW059N12S | PMPB47XP | MPSY65M170 | AP01N60H-HF | PMG85XP | S-LP2307LT1G

 

 
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