SIHF23N60E Datasheet. Specs and Replacement

Type Designator: SIHF23N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 63 nC

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm

Package: TO-220FP

SIHF23N60E substitution

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SIHF23N60E datasheet

 ..1. Size:167K  vishay
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SIHF23N60E

SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Qgd (nC) 25 Avalanche energy rated (UIS) Con... See More ⇒

 9.1. Size:165K  vishay
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SIHF23N60E

SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced Switching and Conduction Losses Qg max. (nC) 86 Ultra Low Gate Charge (Qg) Qgs (nC) 14 Avalanche Energy Rated (UIS) Qgd (nC) 26 ... See More ⇒

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SIHF23N60E

SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS at TJ max. (V) 650 High EAR Capability RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Lower Figure-of-Merit Ron x Qg Qg max. (nC) 98 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 Ultra Low Ron Configuration Single dV/dt Ruggedness Ultra Low G... See More ⇒

 9.3. Size:163K  vishay
 sihf22n65e.pdf pdf_icon

SIHF23N60E

SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availa... See More ⇒

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Detailed specifications: IRF7524D1PBF, IRF7526D1PBF, IRF7534D1, IRF7534D1PBF, IRF7580M, IRF7601PBF, IRF7603PBF, SIHF22N65E, IRF1404, SIHF28N60EF, SIHF30N60E, SIHF510, SIHF510S, SIHF520, SIHF520S, SIHF530, SIHF530S

Keywords - SIHF23N60E MOSFET specs

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