SIHF630S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHF630S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SIHF630S

SIHF630S Datasheet (PDF)

..1. Size:196K vishay
irf630spbf sihf630s.pdf

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

..2. Size:170K vishay
irf630s sihf630s.pdf

7.1. Size:203K vishay
irf630pbf sihf630.pdf

IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

7.2. Size:575K vishay
irf630 sihf630.pdf

IRF630, SiHF630Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Fast Switching RoHS*Qg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTIONTO-

8.1. Size:153K vishay
irf634pbf sihf634.pdf

IRF634, SiHF634Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.45RoHS* Fast SwitchingQg (Max.) (nC) 41COMPLIANT Ease of ParallelingQgs (nC) 6.5Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

8.2. Size:158K vishay
irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt Rating AvailableRDS(on) ()VGS = 10 V 0.435 175 C Operating TemperatureRoHS* Fast Switching COMPLIANTQg (Max.) (nC) 34 Fully Avalanche RatedQgs (nC) 6.5 Ease of ParallelingQgd (nC

8.3. Size:201K vishay
irf634 sihf634.pdf

8.4. Size:168K vishay
irf634s sihf634s.pdf

IRF634S, SiHF634SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt RatingQgs (nC) 6.5 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

8.5. Size:193K vishay
irf634spbf sihf634s.pdf

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