SIHF640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHF640
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 125 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 70 nC
   Tiempo de subida (tr): 51 nS
   Conductancia de drenaje-sustrato (Cd): 430 pF
   Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
   Paquete / Cubierta: TO-220AB

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SIHF640 Datasheet (PDF)

..1. Size:197K vishay
irf640pbf sihf640.pdf

IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC

..2. Size:196K vishay
irf640 sihf640.pdf

0.1. Size:196K vishay
irf640lpbf irf640spbf sihf640l sihf640s.pdf

IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi

0.2. Size:209K vishay
irf640s sihf640s sihf640l.pdf

IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single

8.1. Size:202K vishay
irf644 sihf644.pdf

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

8.2. Size:167K vishay
irf644s sihf644s.pdf

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

8.3. Size:202K vishay
irf644pbf sihf644.pdf