SIHF640 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHF640
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 70 nC
Время нарастания (tr): 51 ns
Выходная емкость (Cd): 430 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
Тип корпуса: TO-220AB
SIHF640 Datasheet (PDF)
irf640pbf sihf640.pdf
IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC
irf640 sihf640.pdf
IRF640, SiHF640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.18RoHS* Fast SwitchingQg (Max.) (nC) 70 COMPLIANT Ease of ParallelingQgs (nC) 13Qgd (nC) 39 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESC
irf640lpbf irf640spbf sihf640l sihf640s.pdf
IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi
irf640s sihf640s sihf640l.pdf
IRF640S, SiHF640S, SiHF640Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Low-profile through-holeRDS(on) ()VGS = 10 V 0.18 Available in tape and reelAvailableQg max. (nC) 70 Dynamic dV/dt ratingQgs (nC) 13 150 C operating temperature AvailableQgd (nC) 39 Fast switchingConfiguration Single
irf644 sihf644.pdf
IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf644s sihf644s.pdf
IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing
irf644pbf sihf644.pdf
IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf644spbf sihf644s.pdf
IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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