IRL520N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 91494AIRL520NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

PD- 95668IRL520NPbF Lead-Freewww.irf.com 18/2/04IRL520NPbF2 www.irf.comIRL520NPbFwww.irf.com 3IRL520NPbF4 www.irf.comIRL520NPbFwww.irf.com 5IRL520NPbF6 www.irf.comIRL520NPbFwww.irf.com 7IRL520NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)

isc N-Channel MOSFET Transistor IRL520N,IIRL520NFEATURESLow drain-source on-resistance:RDS(on) 180m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur

PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur

PD - 91534IRL520NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

IRL520NPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAX

Isc N-Channel MOSFET Transistor IRL520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Isc N-Channel MOSFET Transistor IRL520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt