IRL520N Todos los transistores

 ..1. Size:134K  international rectifier
 irl520n.pdf

PD - 91494A IRL520N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 ..2. Size:308K  international rectifier
 irl520npbf.pdf

PD- 95668 IRL520NPbF Lead-Free www.irf.com 1 8/2/04 IRL520NPbF 2 www.irf.com IRL520NPbF www.irf.com 3 IRL520NPbF 4 www.irf.com IRL520NPbF www.irf.com 5 IRL520NPbF 6 www.irf.com IRL520NPbF www.irf.com 7 IRL520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139)

 ..3. Size:254K  inchange semiconductor
 irl520n.pdf

isc N-Channel MOSFET Transistor IRL520N,IIRL520N FEATURES Low drain-source on-resistance RDS(on) 180m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 0.1. Size:401K  international rectifier
 irl520nspbf irl520nlpbf.pdf

PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur

 0.2. Size:401K  international rectifier
 irl520nlpbf irl520nspbf.pdf

PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Cur

 0.3. Size:186K  international rectifier
 irl520ns irl520nl.pdf

PD - 91534 IRL520NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175 C Operating Temperature RDS(on) = 0.18 Fast Switching G Fully Avalanche Rated ID = 10A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

 0.4. Size:1424K  cn vbsemi
 irl520np.pdf

IRL520NP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAX

 0.5. Size:255K  inchange semiconductor
 irl520nl.pdf

Isc N-Channel MOSFET Transistor IRL520NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100

 0.6. Size:257K  inchange semiconductor
 irl520ns.pdf

Isc N-Channel MOSFET Transistor IRL520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt