IRL520N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL520N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 20(max) nC
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 97 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO220
IRL520N Datasheet (PDF)
irl520n.pdf
PD - 91494AIRL520NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
irl520npbf.pdf
PD- 95668IRL520NPbF Lead-Freewww.irf.com 18/2/04IRL520NPbF2 www.irf.comIRL520NPbFwww.irf.com 3IRL520NPbF4 www.irf.comIRL520NPbFwww.irf.com 5IRL520NPbF6 www.irf.comIRL520NPbFwww.irf.com 7IRL520NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)
irl520n.pdf
isc N-Channel MOSFET Transistor IRL520N,IIRL520NFEATURESLow drain-source on-resistance:RDS(on) 180m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
irl520nlpbf irl520nspbf.pdf
PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur
irl520ns irl520nl.pdf
PD - 91534IRL520NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 100V Surface Mount (IRL520NS) Low-profile through-hole (IRL520NL) 175C Operating TemperatureRDS(on) = 0.18 Fast SwitchingG Fully Avalanche RatedID = 10ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irl520nspbf irl520nlpbf.pdf
PD- 95592IRL520NSPbFIRL520NLPbF Lead-Freewww.irf.com 107/21/04IR520NS/LPbF2 www.irf.comIRL520NS/LPbFwww.irf.com 3IR520NS/LPbF4 www.irf.comIRL520NS/LPbFwww.irf.com 5IR520NS/LPbF6 www.irf.comIRL520NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCur
irl520np.pdf
IRL520NPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAX
irl520nl.pdf
Isc N-Channel MOSFET Transistor IRL520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
irl520ns.pdf
Isc N-Channel MOSFET Transistor IRL520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918