SIHF6N40D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF6N40D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO-220FP

 Búsqueda de reemplazo de SIHF6N40D MOSFET

- Selecciónⓘ de transistores por parámetros

 

SIHF6N40D datasheet

 ..1. Size:173K  vishay
sihf6n40d.pdf pdf_icon

SIHF6N40D

SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 1.0 - Low Input Capacitance (Ciss) Qg max. (nC) 18 - Reduced Capacitive Switching Losses Qgs (nC) 3 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 4 O

 8.1. Size:164K  vishay
sihf6n65e.pdf pdf_icon

SIHF6N40D

SiHF6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat

 9.1. Size:153K  vishay
irf634pbf sihf634.pdf pdf_icon

SIHF6N40D

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 9.2. Size:196K  vishay
irf624 sihf624.pdf pdf_icon

SIHF6N40D

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

Otros transistores... SIHF630S, SIHF634, SIHF634S, SIHF640, SIHF640L, SIHF640S, SIHF644, SIHF644S, SKD502T, SIHF6N65E, SIHF710, SIHF710S, SIHF720, SIHF720L, SIHF720S, SIHF730, SIHF730A