SIHF720S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF720S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm

Encapsulados: TO-263

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SIHF720S datasheet

 ..1. Size:199K  vishay
 irf720spbf sihf720s.pdf pdf_icon

SIHF720S

IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt Rating Qgs (nC) 3.3 Repetitive Avalanche Rated Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Sing

 7.1. Size:201K  vishay
 irf720 sihf720.pdf pdf_icon

SIHF720S

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 7.2. Size:176K  vishay
 irf720lpbf sihf720l.pdf pdf_icon

SIHF720S

IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.8 Available Repetitive avalanche rated Qg (Max.) (nC) 20 Fast switching Qgs (nC) 3.3 Ease of paralleling Available Simple drive requirements Q

 7.3. Size:201K  vishay
 irf720pbf sihf720.pdf pdf_icon

SIHF720S

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

MOSTRAR MÁS

Otros transistores... SIHF644, SIHF644S, SIHF6N40D, SIHF6N65E, SIHF710, SIHF710S, SIHF720, SIHF720L, IRF1010E, SIHF730, SIHF730A, SIHF730AL, SIHF730AS, SIHF730S, SIHF740, SIHF740A, SIHF740AL