SIHF730S Todos los transistores

 

SIHF730S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHF730S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-263
 

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SIHF730S Datasheet (PDF)

 ..1. Size:165K  vishay
 irf730s sihf730s.pdf pdf_icon

SIHF730S

IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

 ..2. Size:191K  vishay
 irf730spbf sihf730s.pdf pdf_icon

SIHF730S

IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

 7.1. Size:206K  vishay
 irf730apbf sihf730a.pdf pdf_icon

SIHF730S

IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti

 7.2. Size:197K  vishay
 sihf730.pdf pdf_icon

SIHF730S

IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

MOSTRAR MÁS

Otros transistores... SIHF710S , SIHF720 , SIHF720L , SIHF720S , SIHF730 , SIHF730A , SIHF730AL , SIHF730AS , IRFP450 , SIHF740 , SIHF740A , SIHF740AL , SIHF740AS , SIHF740LC , SIHF740S , SIHF7N60E , SIHF820 .

History: SL50N02D | QM3009K | CJAB25SN06 | GSM8968 | AP80N04G | IRFSL11N50APBF | CEDM7004

 

 
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