SIHF820 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF820

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.6 nS

Cossⓘ - Capacitancia de salida: 92 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-220AB

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SIHF820 datasheet

 ..1. Size:200K  vishay
irf820 sihf820.pdf pdf_icon

SIHF820

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 ..2. Size:201K  vishay
irf820pbf sihf820.pdf pdf_icon

SIHF820

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 ..3. Size:151K  infineon
irf820 sihf820.pdf pdf_icon

SIHF820

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC DESCR

 0.1. Size:205K  vishay
sihf820a.pdf pdf_icon

SIHF820

IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 Effecti

Otros transistores... SIHF730S, SIHF740, SIHF740A, SIHF740AL, SIHF740AS, SIHF740LC, SIHF740S, SIHF7N60E, IRFP250, SIHF820A, SIHF820AL, SIHF820AS, SIHF820L, SIHF820S, SIHF830, SIHF830A, SIHF830AL