SIHF840S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme

IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to