SIHF840S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF840S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO-263

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SIHF840S datasheet

 ..1. Size:1039K  vishay
irf840s sihf840s.pdf pdf_icon

SIHF840S

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 500 Available in Tape and Reel Available RDS(on) ( )VGS = 10 V 0.85 Dynamic dV/dt Rating RoHS* Qg (Max.) (nC) 63 COMPLIANT Repetitive Avalanche Rated Qgs (nC) 9.3 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Simple Drive Requireme

 ..2. Size:194K  vishay
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SIHF840S

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.3 Repetitive Avalanche Rated Qgd (nC) 32 Fast Switching Ease of Paralleling Configuration Sin

 7.1. Size:207K  vishay
sihf840a.pdf pdf_icon

SIHF840S

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura

 7.2. Size:206K  vishay
irf840a sihf840a.pdf pdf_icon

SIHF840S

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura

Otros transistores... SIHF840, SIHF840A, SIHF840AL, SIHF840AS, SIHF840L, SIHF840LC, SIHF840LCL, SIHF840LCS, STP65NF06, SIHF8N50D, SIHF8N50L, SIHF9510, SIHF9510S, SIHF9520, SIHF9520S, SIHF9530, SIHF9530S