SIHF9Z34S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHF9Z34S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 88 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 620 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: TO-263
- Selección de transistores por parámetros
SIHF9Z34S Datasheet (PDF)
irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9
irf9z34spbf sihf9z34l sihf9z34s.pdf

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9
irf9z34 sihf9z34.pdf

IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme
irf9z34pbf sihf9z34.pdf

IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AOB418 | SVS65R380DD4TR | WVM13N50 | SL3N06 | 2SJ665 | FDMQ8203
History: AOB418 | SVS65R380DD4TR | WVM13N50 | SL3N06 | 2SJ665 | FDMQ8203



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