All MOSFET. SIHF9Z34S Datasheet

 

SIHF9Z34S Datasheet and Replacement


   Type Designator: SIHF9Z34S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-263
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SIHF9Z34S Datasheet (PDF)

 ..1. Size:168K  vishay
 irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf pdf_icon

SIHF9Z34S

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9

 ..2. Size:193K  vishay
 irf9z34spbf sihf9z34l sihf9z34s.pdf pdf_icon

SIHF9Z34S

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S)Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating TemperatureQgs (nC) 9.9

 6.1. Size:197K  vishay
 irf9z34 sihf9z34.pdf pdf_icon

SIHF9Z34S

IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme

 6.2. Size:198K  vishay
 irf9z34pbf sihf9z34.pdf pdf_icon

SIHF9Z34S

IRF9Z34, SiHF9Z34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = - 10 V 0.14 P-Channel RoHS*Qg (Max.) (nC) 34COMPLIANT 175 C Operating TemperatureQgs (nC) 9.9 Fast SwitchingQgd (nC) 16 Ease of ParallelingConfiguration Single Simple Drive Requireme

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Keywords - SIHF9Z34S MOSFET datasheet

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