SIHFBC40AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFBC40AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 136 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET SIHFBC40AS
SIHFBC40AS Datasheet (PDF)
irfbc40as sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
irfbc40aspbf sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
irfbc40a sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
irfbc40lc sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbc40pbf sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbc40spbf sihfbc40l sihfbc40s.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
irfbc40lc irfbc40lcpbf sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HM2309
History: HM2309
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918