SIHFBF20S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFBF20S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO-263

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SIHFBF20S datasheet

 ..1. Size:270K  vishay
 irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf pdf_icon

SIHFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

 ..2. Size:296K  vishay
 irfbf20spbf sihfbf20l sihfbf20s.pdf pdf_icon

SIHFBF20S

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

 6.1. Size:1055K  vishay
 irfbf20pbf sihfbf20.pdf pdf_icon

SIHFBF20S

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 6.2. Size:1053K  vishay
 irfbf20 sihfbf20.pdf pdf_icon

SIHFBF20S

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

MOSTRAR MÁS

Otros transistores... SIHFBC40LC, SIHFBC40S, SIHFBE20, SIHFBE30, SIHFBE30L, SIHFBE30S, SIHFBF20, SIHFBF20L, IRFP260, SIHFBF30, SIHFBF30S, SIHFBG20, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110