SIHFBF20S datasheet, аналоги, основные параметры
Наименование производителя: SIHFBF20S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
Тип корпуса: TO-263
Аналог (замена) для SIHFBF20S
- подборⓘ MOSFET транзистора по параметрам
SIHFBF20S даташит
irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs
irfbf20spbf sihfbf20l sihfbf20s.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs
irfbf20pbf sihfbf20.pdf
IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D
irfbf20 sihfbf20.pdf
IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D
Другие IGBT... SIHFBC40LC, SIHFBC40S, SIHFBE20, SIHFBE30, SIHFBE30L, SIHFBE30S, SIHFBF20, SIHFBF20L, IRFP260, SIHFBF30, SIHFBF30S, SIHFBG20, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASDM7002EZA | ASDM68N80KQ | ASDM6802ZC | ASDM60R042NQ | ASDM60P12KQ | ASDM60N80KQ | ASDM60N70Q | ASDM60N50KQ | ASDM60N45KQ | ASDM60N30KQ | ASDM540G | ASDM4976S | ASDM4606S | ASDM40R009NQ | ASDM40N80KQ | ASDM40N60KQ
Popular searches
bc546 | 2sc458 | a733 transistor | mpsa92 | tip142 | d882 | irf740 datasheet | ksa992







