SIHFD120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: HVMDIP

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SIHFD120 datasheet

 ..1. Size:1828K  vishay
 irfd120 sihfd120.pdf pdf_icon

SIHFD120

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 ..2. Size:1829K  vishay
 irfd120pbf sihfd120.pdf pdf_icon

SIHFD120

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 7.1. Size:1752K  vishay
 irfd123 sihfd123.pdf pdf_icon

SIHFD120

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 8.1. Size:147K  vishay
 irfd110 sihfd110.pdf pdf_icon

SIHFD120

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall

MOSTRAR MÁS

Otros transistores... SIHFBF30S, SIHFBG20, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110, SIHFD113, IRFB3607, SIHFD210, SIHFD214, SIHFD220, SIHFD224, SIHFD310, SIHFD320, SIHFD420, SIHFD9010