SIHFD120 Datasheet: MOSFET, N-Ch, 100V, 1.3A. Full specification with pinout and replacement list

SIHFD120 Datasheet. Specs and Replacement

Type Designator: SIHFD120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: HVMDIP

SIHFD120 substitution

- MOSFET ⓘ Cross-Reference Search

SIHFD120 datasheet

..1. Size:1828K vishay
irfd120 sihfd120.pdf pdf_icon

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par... See More ⇒

..2. Size:1829K vishay
irfd120pbf sihfd120.pdf pdf_icon

7.1. Size:1752K vishay
irfd123 sihfd123.pdf pdf_icon

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par... See More ⇒

8.1. Size:147K vishay
irfd110 sihfd110.pdf pdf_icon

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall... See More ⇒