SIHFD9010 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD9010

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: HVMDIP

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SIHFD9010 datasheet

 ..1. Size:131K  vishay
 irfd9010pbf sihfd9010.pdf pdf_icon

SIHFD9010

IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E

 ..2. Size:129K  vishay
 sihfd9010 irfd9010.pdf pdf_icon

SIHFD9010

IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) - 50 Compact, End Stackable Fast Switching RDS(on) ( )VGS = - 10 V 0.50 Low Drive Current Qg (Max.) (nC) 11 Easy Paralleled Qgs (nC) 3.8 Excellent Temperature Stability Qgd (nC) 4.1 P-Channel Versatility Compliant to RoHS Directive 2002/95/E

 6.1. Size:1751K  vishay
 irfd9014pbf sihfd9014.pdf pdf_icon

SIHFD9010

IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin

 6.2. Size:1750K  vishay
 irfd9014 sihfd9014.pdf pdf_icon

SIHFD9010

IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switchin

MOSTRAR MÁS

Otros transistores... SIHFD120, SIHFD210, SIHFD214, SIHFD220, SIHFD224, SIHFD310, SIHFD320, SIHFD420, TK10A60D, SIHFD9014, SIHFD9024, SIHFD9110, SIHFD9120, SIHFD9210, SIHFD9220, SIHFDC20, SIHFI510G