SIHFI630G Todos los transistores

 

SIHFI630G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFI630G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-220FP
     - Selección de transistores por parámetros

 

SIHFI630G Datasheet (PDF)

 ..1. Size:1541K  vishay
 irfi630g sihfi630g.pdf pdf_icon

SIHFI630G

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S

 ..2. Size:1543K  vishay
 sihfi630g.pdf pdf_icon

SIHFI630G

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S

 7.1. Size:1107K  vishay
 sihfi634g.pdf pdf_icon

SIHFI630G

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

 7.2. Size:1106K  vishay
 irfi634g sihfi634g.pdf pdf_icon

SIHFI630G

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3620DP-G | 2SJ152

 

 
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