SIHFI630G Datasheet. Specs and Replacement

Type Designator: SIHFI630G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220FP

SIHFI630G substitution

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SIHFI630G datasheet

 ..1. Size:1541K  vishay
 irfi630g sihfi630g.pdf pdf_icon

SIHFI630G

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒

 ..2. Size:1543K  vishay
 sihfi630g.pdf pdf_icon

SIHFI630G

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒

 7.1. Size:1107K  vishay
 sihfi634g.pdf pdf_icon

SIHFI630G

IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre... See More ⇒

 7.2. Size:1106K  vishay
 irfi634g sihfi634g.pdf pdf_icon

SIHFI630G

IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre... See More ⇒

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Detailed specifications: SIHFD9220, SIHFDC20, SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G, IRF520, SIHFI634G, SIHFI640G, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G

Keywords - SIHFI630G MOSFET specs

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