SIHFI634G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFI634G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO-220FP

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SIHFI634G datasheet

 ..1. Size:1107K  vishay
 sihfi634g.pdf pdf_icon

SIHFI634G

IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre

 ..2. Size:1106K  vishay
 irfi634g sihfi634g.pdf pdf_icon

SIHFI634G

IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre

 7.1. Size:1541K  vishay
 irfi630g sihfi630g.pdf pdf_icon

SIHFI634G

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S

 7.2. Size:1543K  vishay
 sihfi630g.pdf pdf_icon

SIHFI634G

IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S

MOSTRAR MÁS

Otros transistores... SIHFDC20, SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G, SIHFI630G, IRF2807, SIHFI640G, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G, SIHFI830G