SIHFI640G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFI640G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-220FP

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SIHFI640G datasheet

 ..1. Size:1801K  vishay
 sihfi640g.pdf pdf_icon

SIHFI640G

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 ..2. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

SIHFI640G

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr

 7.1. Size:1398K  vishay
 irfi644g sihfi644g.pdf pdf_icon

SIHFI640G

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si

 7.2. Size:1399K  vishay
 sihfi644g.pdf pdf_icon

SIHFI640G

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si

MOSTRAR MÁS

Otros transistores... SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G, SIHFI630G, SIHFI634G, STF13NM60N, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G, SIHFI830G, SIHFI840G