SIHFI640G Datasheet. Specs and Replacement

Type Designator: SIHFI640G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220FP

SIHFI640G substitution

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SIHFI640G datasheet

 ..1. Size:1801K  vishay
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SIHFI640G

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr... See More ⇒

 ..2. Size:1799K  vishay
 irfi640g sihfi640g.pdf pdf_icon

SIHFI640G

IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr... See More ⇒

 7.1. Size:1398K  vishay
 irfi644g sihfi644g.pdf pdf_icon

SIHFI640G

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒

 7.2. Size:1399K  vishay
 sihfi644g.pdf pdf_icon

SIHFI640G

IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒

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Detailed specifications: SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, SIHFI614G, SIHFI620G, SIHFI630G, SIHFI634G, STF13NM60N, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G, SIHFI830G, SIHFI840G

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