SIHFI730G Todos los transistores

 

SIHFI730G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFI730G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-220FP
 

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SIHFI730G Datasheet (PDF)

 ..1. Size:1545K  vishay
 sihfi730g.pdf pdf_icon

SIHFI730G

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 ..2. Size:1544K  vishay
 irfi730g sihfi730g.pdf pdf_icon

SIHFI730G

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.1. Size:1583K  vishay
 irfi740g sihfi740g.pdf pdf_icon

SIHFI730G

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

 8.2. Size:1499K  vishay
 irfi720g sihfi720g.pdf pdf_icon

SIHFI730G

IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

MOSTRAR MÁS

Otros transistores... SIHFI540G , SIHFI614G , SIHFI620G , SIHFI630G , SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G , K2611 , SIHFI740G , SIHFI740GLC , SIHFI820G , SIHFI830G , SIHFI840G , SIHFI840GLC , SIHFI9520G , SIHFI9530G .

History: APT8020LLLG | PMPB215ENEA | OSG65R099HSZF | 2N7002KWA | IXTT50P10 | AP9997GK | AP0403GH-HF

 

 
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