SIHFI730G datasheet, подбор замены

 ..1. Size:1545K  vishay
 sihfi730g.pdf 

IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 5.7 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 ..2. Size:1544K  vishay
 irfi730g sihfi730g.pdf 

IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 5.7 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.1. Size:1583K  vishay
 irfi740g sihfi740g.pdf 

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin

 8.2. Size:1499K  vishay
 irfi720g sihfi720g.pdf 

IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre

 8.3. Size:1296K  vishay
 irfi740glc sihfi740glc.pdf 

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

 8.4. Size:1741K  vishay
 irfi744g sihfi744g.pdf 

IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

 8.5. Size:1501K  vishay
 sihfi720g.pdf 

IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre

 8.6. Size:1297K  vishay
 sihfi740glc.pdf 

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

 8.7. Size:1600K  vishay
 sihfi740g.pdf 

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Singl