SIHFI9Z24G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFI9Z24G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 19 nC
trⓘ - Tiempo de subida: 68 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MOSFET SIHFI9Z24G
SIHFI9Z24G Datasheet (PDF)
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
irfi9z14g sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
irfi9z14g-pbf sihfi9z14g.pdf
IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV
irfi9z34g-pbf sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
irfi9z34g sihfi9z34g.pdf
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918