All MOSFET. SIHFI9Z24G Datasheet

 

SIHFI9Z24G Datasheet and Replacement


   Type Designator: SIHFI9Z24G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220FP
 

 SIHFI9Z24G substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIHFI9Z24G Datasheet (PDF)

 ..1. Size:1485K  vishay
 irfi9z24g-pbf sihfi9z24g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt

 ..2. Size:1483K  vishay
 irfi9z24g sihfi9z24g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt

 7.1. Size:1578K  vishay
 irfi9z14g sihfi9z14g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV

 7.2. Size:1580K  vishay
 irfi9z14g-pbf sihfi9z14g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z14G, SiHFI9Z14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.50RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV

SHOW MORE

Datasheet: SIHFI9530G , SIHFI9540G , SIHFI9610G , SIHFI9620G , SIHFI9630G , SIHFI9634G , SIHFI9640G , SIHFI9Z14G , EMB04N03H , SIHFI9Z34G , SIHFIB5N65A , SIHFIB6N60A , SIHFIB7N50A , SIHFIBC20G , SIHFIBC30G , SIHFIBC40G , SIHFIBC40GLC .

History: SIA817EDJ

Keywords - SIHFI9Z24G MOSFET datasheet

 SIHFI9Z24G cross reference
 SIHFI9Z24G equivalent finder
 SIHFI9Z24G lookup
 SIHFI9Z24G substitution
 SIHFI9Z24G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.