SIHFI9Z24G Datasheet. Specs and Replacement

Type Designator: SIHFI9Z24G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-220FP

SIHFI9Z24G substitution

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SIHFI9Z24G datasheet

 ..1. Size:1485K  vishay
 irfi9z24g-pbf sihfi9z24g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt... See More ⇒

 ..2. Size:1483K  vishay
 irfi9z24g sihfi9z24g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt... See More ⇒

 7.1. Size:1578K  vishay
 irfi9z14g sihfi9z14g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV... See More ⇒

 7.2. Size:1580K  vishay
 irfi9z14g-pbf sihfi9z14g.pdf pdf_icon

SIHFI9Z24G

IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV... See More ⇒

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Detailed specifications: SIHFI9530G, SIHFI9540G, SIHFI9610G, SIHFI9620G, SIHFI9630G, SIHFI9634G, SIHFI9640G, SIHFI9Z14G, EMB04N03H, SIHFI9Z34G, SIHFIB5N65A, SIHFIB6N60A, SIHFIB7N50A, SIHFIBC20G, SIHFIBC30G, SIHFIBC40G, SIHFIBC40GLC

Keywords - SIHFI9Z24G MOSFET specs

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