SIHFIBC40G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFIBC40G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de SIHFIBC40G MOSFET
SIHFIBC40G PDF Specs
sihfibc40g.pdf
IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing... See More ⇒
irfibc40g sihfibc40g.pdf
IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing... See More ⇒
sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati... See More ⇒
irfibc40glc sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati... See More ⇒
Otros transistores... SIHFI9Z14G , SIHFI9Z24G , SIHFI9Z34G , SIHFIB5N65A , SIHFIB6N60A , SIHFIB7N50A , SIHFIBC20G , SIHFIBC30G , AO4468 , SIHFIBC40GLC , SIHFIBE20G , SIHFIBE30G , SIHFIBF20G , SIHFIBF30G , SIHFIZ14G , SIHFIZ24G , SIHFIZ34G .
History: 2N7002G-AE2-R
History: 2N7002G-AE2-R
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