Справочник MOSFET. SIHFIBC40G

 

SIHFIBC40G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFIBC40G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHFIBC40G

 

 

SIHFIBC40G Datasheet (PDF)

 ..1. Size:1443K  vishay
 sihfibc40g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

 ..2. Size:1441K  vishay
 irfibc40g sihfibc40g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

 0.1. Size:1603K  vishay
 sihfibc40glc.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

 0.2. Size:1601K  vishay
 irfibc40glc sihfibc40glc.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

 7.1. Size:1464K  vishay
 sihfibc20g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

 7.2. Size:1462K  vishay
 irfibc20g sihfibc20g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

 7.3. Size:923K  vishay
 irfibc30g sihfibc30g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

 7.4. Size:924K  vishay
 sihfibc30g.pdf

SIHFIBC40G SIHFIBC40G

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

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