SIHFP150 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFP150

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO-247AC

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SIHFP150 datasheet

 ..1. Size:1470K  vishay
 irfp150 sihfp150.pdf pdf_icon

SIHFP150

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S

 ..2. Size:1476K  vishay
 sihfp150.pdf pdf_icon

SIHFP150

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S

 8.1. Size:176K  vishay
 irfp17n50l sihfp17n50l.pdf pdf_icon

SIHFP150

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg

 8.2. Size:181K  vishay
 irfp17n50l irfp17n50lpbf sihfp17n50l.pdf pdf_icon

SIHFP150

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg

MOSTRAR MÁS

Otros transistores... SIHFL214, SIHFL9014, SIHFL9110, SIHFP048, SIHFP048R, SIHFP054, SIHFP064, SIHFP140, AON6414A, SIHFP17N50L, SIHFP21N60L, SIHFP22N50A, SIHFP22N60K, IRF7606PBF, IRF7607PBF, IRF7663PBF, IRF7665S2TR1PBF