IRF7665S2TRPBF Todos los transistores

 

IRF7665S2TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7665S2TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.4 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm
   Paquete / Cubierta: DIRECTFET
     - Selección de transistores por parámetros

 

IRF7665S2TRPBF Datasheet (PDF)

 ..1. Size:244K  international rectifier
 irf7665s2tr1pbf irf7665s2trpbf.pdf pdf_icon

IRF7665S2TRPBF

PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st

 3.1. Size:326K  international rectifier
 auirf7665s2tr.pdf pdf_icon

IRF7665S2TRPBF

PD - 96286BAUIRF7665S2TRAUTOMOTIVE GRADEAUIRF7665S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ.51m Low Qg for Better THD and Improved Efficiencymax. 62m Low Qrr for Better THD and Lower EMIRG (typical)3.5 Low P

 3.2. Size:474K  infineon
 auirf7665s2tr.pdf pdf_icon

IRF7665S2TRPBF

AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti

 5.1. Size:247K  international rectifier
 irf7665s2pbf.pdf pdf_icon

IRF7665S2TRPBF

PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WFF5N65B | GSM2341 | RRL025P03 | BUZ308 | UF640G-AA3-R | BSS123A | LSD65R180GT

 

 
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