IRL620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD -9.1217IRL620HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.80Fast SwitchingEase of parallelingSimple Drive RequirementsID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, rug

PD- 95670IRL620PbF Lead-Free8/2/04Document Number: 91301 www.vishay.com1IRL620PbFDocument Number: 91301 www.vishay.com2IRL620PbFDocument Number: 91301 www.vishay.com3IRL620PbFDocument Number: 91301 www.vishay.com4IRL620PbFDocument Number: 91301 www.vishay.com5IRL620PbFDocument Number: 91301 www.vishay.com6IRL620PbFDocument Number: 91301 www.v

IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single

IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single

PD- 95591IRL620SPbF Lead-Free07/21/04Document Number: 91302 www.vishay.com1IRL620SPbFDocument Number: 91302 www.vishay.com2IRL620SPbFDocument Number: 91302 www.vishay.com3IRL620SPbFDocument Number: 91302 www.vishay.com4IRL620SPbFDocument Number: 91302 www.vishay.com5IRL620SPbFDocument Number: 91302 www.vishay.com6IRL620SPbFPeak Diode Recovery

PD -9.1218IRL620SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.80Logic-Level Gate DriveRDS(on) Specified at VGS=4V & 5VFast SwitchingID = 5.2ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized

IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl

IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V

IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V