IRF7805QPBF Todos los transistores

 

IRF7805QPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7805QPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SO-8
 

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IRF7805QPBF Datasheet (PDF)

 6.1. Size:203K  international rectifier
 auirf7805q.pdf pdf_icon

IRF7805QPBF

PD 96367BAUIRF7805QFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceAAV(BR)DSS 30V1l Logic Level 8S Dl N Channel MOSFET2 7S DRDS(on) typ.9.2ml Surface Mount3 6S Dl Available in Tape & Reel4 5 max. 11ml 150C Operating Temperature G Dl Automotive [Q101] QualifiedTop View ID 13Al Lead-Free, RoHS CompliantD

 6.2. Size:232K  international rectifier
 irf7805q.pdf pdf_icon

IRF7805QPBF

PD 96114IRF7805QPbFl Advanced Process Technologyl Ultra Low On-Resistancel N Channel MOSFETl Surface MountA1 8l Available in Tape & Reel S Dl 150C Operating Temperature2 7S Dl Automotive [Q101] Qualified3 6S Dl Lead-Free4 5G DDescriptionSO-8Top ViewSpecifically designed for Automotive applications, theseHEXFET Power MOSFET's in package utilize

 7.1. Size:270K  international rectifier
 irf7805z.pdf pdf_icon

IRF7805QPBF

PD - 94635BIRF7805ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m:@VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curr

 7.2. Size:289K  international rectifier
 irf7805zgpbf.pdf pdf_icon

IRF7805QPBF

PD - 96253IRF7805ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems.Al Lead-FreeA1 8S Dl Halogen-Free2 7S D3 6BenefitsS Dl Very Low RDS(on) at 4.5V VGS 4 5G Dl Ultra-Low Gate ImpedanceSO-8Top Viewl

MOSTRAR MÁS

Otros transistores... IRF7769L2TR1PBF , IRF7769L2TRPBF , IRF7779L2TR1PBF , IRF7779L2TRPBF , IRF7799L2TR1PBF , IRF7799L2TRPBF , IRF7805PBF , IRF7805PBF-1 , 10N65 , IRF7805ZGPBF , IRF7805ZPBF , IRF7805ZPBF-1 , IRF7807APBF , IRF7807D1PBF , IRF7807D2PBF , IRF7807PBF-1 , IRF7807VD1PBF .

History: AP2320GN

 

 
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