IRF7805QPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7805QPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 20 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SO-8
IRF7805QPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7805QPBF Datasheet (PDF)
auirf7805q.pdf
PD 96367BAUIRF7805QFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceAAV(BR)DSS 30V1l Logic Level 8S Dl N Channel MOSFET2 7S DRDS(on) typ.9.2ml Surface Mount3 6S Dl Available in Tape & Reel4 5 max. 11ml 150C Operating Temperature G Dl Automotive [Q101] QualifiedTop View ID 13Al Lead-Free, RoHS CompliantD
irf7805q.pdf
PD 96114IRF7805QPbFl Advanced Process Technologyl Ultra Low On-Resistancel N Channel MOSFETl Surface MountA1 8l Available in Tape & Reel S Dl 150C Operating Temperature2 7S Dl Automotive [Q101] Qualified3 6S Dl Lead-Free4 5G DDescriptionSO-8Top ViewSpecifically designed for Automotive applications, theseHEXFET Power MOSFET's in package utilize
irf7805z.pdf
PD - 94635BIRF7805ZHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m:@VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltage and Curr
irf7805zgpbf.pdf
PD - 96253IRF7805ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems.Al Lead-FreeA1 8S Dl Halogen-Free2 7S D3 6BenefitsS Dl Very Low RDS(on) at 4.5V VGS 4 5G Dl Ultra-Low Gate ImpedanceSO-8Top Viewl
irf7805 irf7805a.pdf
PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan
irf7805.pdf
PD 91746CIRF7805/IRF7805AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8Top Viewbalance of on-resistan
irf7805zpbf.pdf
PD - 96011AIRF7805ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l High Frequency Point-of-Load6.8m @VGS = 10V30V 18nCSynchronous Buck Converter forApplications in Networking &Computing Systems.Al Lead-FreeA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance4 5G Dl Fully Characterized Avalanche Vol
irf7805pbf.pdf
IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A1 8S D Ideal for Mobile DC-DC Converters 2 7S D Low Conduction Losses 3 6S D Low Switching Losses 4 5G D Lead-Free SO-8 Top ViewIRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to
irf7805z.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETIRF7805Z (KRF7805Z) FeaturesSOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V)A HEXFET Power MOSFET A1 81.50 0.15S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS20 TA
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
