IRF7822 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

PD - 95024IRF7822PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance a

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an

PD - 94579AIRF7821HEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltageand Current

PD - 96248IRF7821GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing SystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8T

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

PD - 94602IRF7828HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The