IRF7822 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF7822
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: SO-8

IRF7822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF7822 Datasheet (PDF)

..1. Size:69K international rectifier
irf7822.pdf

PD - 94279IRF7822HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

..2. Size:143K international rectifier
irf7822pbf.pdf

PD - 95024IRF7822PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance a

8.1. Size:214K international rectifier
irf7820pbf.pdf

IRF7820PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg (typ.)l Synchronous MOSFET for Notebook200V 78m@VGS = 10V 29nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking Systems AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 10V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Curr

8.2. Size:255K international rectifier
irf7821pbf-1.pdf

IRF7821PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 9.1 m2 7S D(@V = 10V)GS3 6Qg (typical) 9.3 nCS DID 4 5G D13.6 A(@T = 25C)ASO-8Top ViewApplicationsl High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &Computing Systems.Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor Comp

8.3. Size:580K international rectifier
irf7828pbf.pdf

PD-95214AIRF7828PbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D Lead-Free2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance an

8.4. Size:206K international rectifier
irf7821.pdf

PD - 94579AIRF7821HEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Ultra-Low Gate Impedance45G Dl Fully Characterized Avalanche Voltageand Current

8.5. Size:288K international rectifier
irf7821gpbf.pdf

PD - 96248IRF7821GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing SystemsAA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand CurrentSO-8T

8.6. Size:285K international rectifier
irf7821pbf.pdf

PD - 95213AIRF7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max Qg(typ.)l High Frequency Point-of-Load 30V 9.1mW@VGS= 10V 9.3nCSynchronous Buck Converter forApplications in Networking &Computing Systems.l Lead-Free AA1 8S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltageand Cur

8.7. Size:479K international rectifier
irf7828.pdf

PD - 94602IRF7828HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D2 7S DDescription 3 6S DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The

8.8. Size:214K infineon
irf7820pbf.pdf