IRF7NA2907 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7NA2907
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 2280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: SMD-2
- Selección de transistores por parámetros
IRF7NA2907 Datasheet (PDF)
irf7na2907.pdf

PD-94337CHEXFET POWER MOSFET IRF7NA2907SURFACE MOUNT (SMD-2)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A*Seventh Generation HEXFET power MOSFETs fromSMD-2International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then
irf7njz44v.pdf

PD - 94433HEXFET POWER MOSFET IRF7NJZ44VSURFACE MOUNT (SMD-0.5)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A*Seventh Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t
irf7n1405.pdf

PD - 94643AHEXFET POWER MOSFET IRF7N1405SURFACE MOUNT (SMD-1) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A*Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingSMD-1techniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
smirf7n65.pdf

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF3415PBF | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | UT9435HL-AA3-R | NTR4503NT1
History: IRF3415PBF | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | UT9435HL-AA3-R | NTR4503NT1



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c | bd140 transistor | 2n2222a datasheet