IRF7NA2907 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7NA2907

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 125 nS

Cossⓘ - Capacitancia de salida: 2280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: SMD-2

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IRF7NA2907 datasheet

 ..1. Size:172K  international rectifier
 irf7na2907.pdf pdf_icon

IRF7NA2907

PD-94337C HEXFET POWER MOSFET IRF7NA2907 SURFACE MOUNT (SMD-2) 75V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A* Seventh Generation HEXFET power MOSFETs from SMD-2 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the n

 9.1. Size:113K  international rectifier
 irf7njz44v.pdf pdf_icon

IRF7NA2907

PD - 94433 HEXFET POWER MOSFET IRF7NJZ44V SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A* Seventh Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with t

 9.2. Size:196K  international rectifier
 irf7n1405.pdf pdf_icon

IRF7NA2907

PD - 94643A HEXFET POWER MOSFET IRF7N1405 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A* Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing SMD-1 techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa

 9.3. Size:1229K  cn sps
 smirf7n65.pdf pdf_icon

IRF7NA2907

SMIRF7N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3 (VGS=10V, ID=3.5A) on-state resistance, provide superior s

MOSTRAR MÁS

Otros transistores... IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, IRF7946, IRF7E3704, IRF7F3704, IRF7MS2907, IRF7N1405, IRLZ44N, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM, IRF8010PBF, IRF8010SPBF, IRF8113GPBF, IRF8113PBF, IRF8113PBF-1