IRF7NA2907 Datasheet. Specs and Replacement

Type Designator: IRF7NA2907

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 2280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SMD-2

IRF7NA2907 substitution

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IRF7NA2907 datasheet

 ..1. Size:172K  international rectifier
 irf7na2907.pdf pdf_icon

IRF7NA2907

PD-94337C HEXFET POWER MOSFET IRF7NA2907 SURFACE MOUNT (SMD-2) 75V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A* Seventh Generation HEXFET power MOSFETs from SMD-2 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the n... See More ⇒

 9.1. Size:113K  international rectifier
 irf7njz44v.pdf pdf_icon

IRF7NA2907

PD - 94433 HEXFET POWER MOSFET IRF7NJZ44V SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A* Seventh Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with t... See More ⇒

 9.2. Size:196K  international rectifier
 irf7n1405.pdf pdf_icon

IRF7NA2907

PD - 94643A HEXFET POWER MOSFET IRF7N1405 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A* Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing SMD-1 techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa... See More ⇒

 9.3. Size:1229K  cn sps
 smirf7n65.pdf pdf_icon

IRF7NA2907

SMIRF7N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3 (VGS=10V, ID=3.5A) on-state resistance, provide superior s... See More ⇒

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Detailed specifications: IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, IRF7946, IRF7E3704, IRF7F3704, IRF7MS2907, IRF7N1405, IRLZ44N, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM, IRF8010PBF, IRF8010SPBF, IRF8113GPBF, IRF8113PBF, IRF8113PBF-1

Keywords - IRF7NA2907 MOSFET specs

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