IRF7NA2907 Datasheet and Replacement. Cross Reference Search

IRF7NA2907 Datasheet (PDF)

..1. Size:172K international rectifier
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PD-94337CHEXFET POWER MOSFET IRF7NA2907SURFACE MOUNT (SMD-2)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 75A*Seventh Generation HEXFET power MOSFETs fromSMD-2International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then

9.1. Size:113K international rectifier
irf7njz44v.pdf pdf_icon

PD - 94433HEXFET POWER MOSFET IRF7NJZ44VSURFACE MOUNT (SMD-0.5)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7NJZ44V 60V 0.0165 22A*Seventh Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

9.2. Size:196K international rectifier
irf7n1405.pdf pdf_icon

PD - 94643AHEXFET POWER MOSFET IRF7N1405SURFACE MOUNT (SMD-1) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7N1405 55V 0.0053 55A*Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingSMD-1techniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

9.3. Size:1229K cn sps
smirf7n65.pdf pdf_icon

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s

Datasheet: IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRF7F3704 , IRF7MS2907 , IRF7N1405 , IRF640N , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF , IRF8113GPBF , IRF8113PBF , IRF8113PBF-1 .