IRF8010PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8010PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de IRF8010PBF MOSFET
IRF8010PBF Datasheet (PDF)
irf8010pbf.pdf

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltag
irf8010spbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C
irf8010.pdf

PD - 94497SMPS MOSFETIRF8010ApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlVDSS RDS(on) max IDBenefits100V 15m 80A Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current Typica
irf8010lpbf irf8010spbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C
Otros transistores... IRF7E3704 , IRF7F3704 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF3710 , IRF8010SPBF , IRF8113GPBF , IRF8113PBF , IRF8113PBF-1 , IRF820ASPBF , IRF820B , IRF820L , IRF820LPBF .
History: JCS90N10I | SLD2N65UZ | SLF80R380SJ | BSL302SN | PMGD780SN | CSD17552Q3A | NVMFS5830NL
History: JCS90N10I | SLD2N65UZ | SLF80R380SJ | BSL302SN | PMGD780SN | CSD17552Q3A | NVMFS5830NL



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