Справочник MOSFET. IRF8010PBF

 

IRF8010PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF8010PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 260 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 80 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 81 nC

Время нарастания (tr): 130 ns

Выходная емкость (Cd): 480 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для IRF8010PBF

 

 

IRF8010PBF Datasheet (PDF)

0.1. irf8010pbf.pdf Size:133K _international_rectifier

IRF8010PBF
IRF8010PBF

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltag

7.1. irf8010.pdf Size:494K _international_rectifier

IRF8010PBF
IRF8010PBF

PD - 94497SMPS MOSFETIRF8010ApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlVDSS RDS(on) max IDBenefits100V 15m 80A Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current Typica

7.2. irf8010spbf.pdf Size:224K _international_rectifier

IRF8010PBF
IRF8010PBF

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C

 7.3. irf8010.pdf Size:245K _inchange_semiconductor

IRF8010PBF
IRF8010PBF

isc N-Channel MOSFET Transistor IRF8010IIRF8010FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

7.4. irf8010l.pdf Size:256K _inchange_semiconductor

IRF8010PBF
IRF8010PBF

Isc N-Channel MOSFET Transistor IRF8010LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

 7.5. irf8010s.pdf Size:258K _inchange_semiconductor

IRF8010PBF
IRF8010PBF

Isc N-Channel MOSFET Transistor IRF8010SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top