IRF8010PBF datasheet, подбор замены

 ..1. Size:133K  international rectifier
 irf8010pbf.pdf 

PD - 95505 IRF8010PbF SMPS MOSFET Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltag

 7.1. Size:224K  international rectifier
 irf8010spbf.pdf 

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

 7.2. Size:494K  international rectifier
 irf8010.pdf 

PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15m 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typica

 7.3. Size:224K  international rectifier
 irf8010lpbf irf8010spbf.pdf 

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

 7.4. Size:224K  international rectifier
 irf8010spbf irf8010lpbf.pdf 

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

 7.5. Size:1397K  cn vbsemi
 irf8010sp.pdf 

IRF8010SP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.010 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 85 D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 7.6. Size:245K  inchange semiconductor
 irf8010.pdf 

isc N-Channel MOSFET Transistor IRF8010 IIRF8010 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 7.7. Size:258K  inchange semiconductor
 irf8010s.pdf 

Isc N-Channel MOSFET Transistor IRF8010S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.8. Size:256K  inchange semiconductor
 irf8010l.pdf 

Isc N-Channel MOSFET Transistor IRF8010L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100