SIHFP264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFP264
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 280 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 38 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 210 nC
Tiempo de subida (tr): 99 nS
Conductancia de drenaje-sustrato (Cd): 870 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: TO-247AC
Búsqueda de reemplazo de MOSFET SIHFP264
SIHFP264 Datasheet (PDF)
irfp264 sihfp264.pdf
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
sihfp264.pdf
IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp26n60l sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
sihfp260.pdf
IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp
irfp260 sihfp260.pdf
IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
