All MOSFET. SIHFP264 Datasheet

 

SIHFP264 Datasheet and Replacement


   Type Designator: SIHFP264
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-247AC
 

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SIHFP264 Datasheet (PDF)

 ..1. Size:1541K  vishay
 irfp264 sihfp264.pdf pdf_icon

SIHFP264

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

 ..2. Size:1547K  vishay
 sihfp264.pdf pdf_icon

SIHFP264

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

 7.1. Size:192K  vishay
 irfp26n60l irfp26n60lpbf sihfp26n60l.pdf pdf_icon

SIHFP264

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.2. Size:188K  vishay
 irfp26n60l sihfp26n60l.pdf pdf_icon

SIHFP264

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

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Datasheet: IRF820PBF , IRF820SPBF , SIHFP23N50L , SIHFP240 , SIHFP244 , SIHFP250 , SIHFP254 , SIHFP260 , IRF1010E , SIHFP26N60L , SIHFP27N60K , SIHFP31N50L , SIHFP32N50K , SIHFP340 , SIHFP350 , SIHFP350LC , SIHFP360 .

History: TPA70R450C

Keywords - SIHFP264 MOSFET datasheet

 SIHFP264 cross reference
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